Chapter 1. Electron Dynamics 1.1. Introduction 1.2. Conduction of electricity through gases 1.3. Electrons in gases 1.
4. Motion of charged particle in electric field 1.5. Motion of charged particle in magnetic field 1.6. Motion of charged particle in combined electric and magnetic field 1.7. Cathode ray tube Chapter 2.
Growth & Crystal properties of Semiconductors 2.1. Semiconductor materials 2.2. Types of solids 2.3. Crystal lattices 2.4.
Atomic bonding 2.5. Imperfections and Impurities in Solids 2.6. Bulk crystal growth 2.7. Epitaxial growth Chapter 3. Energy bands & charge carriers in Semiconductors 3.
1. Bonding forces & formation of Energy bands 3.2. Energy band structure of Ge, Si & GaAs 3.3. Charge carriers in Semiconductors 3.4. Carrier concentrations in semiconductors 3.
5. Carrier drift 3.6. Carrier diffusion 3.7. Graded impurity distribution Chapter 4. Excess carriers in Semiconductors 4.1.
Semiconductor in equilibrium 4.2. Excess carrier generation & recombination 4.3. Carrier lifetime 4.4. Diffusion of carriers 4.5.
Continuity equation 4.6. Surface effects Chapter 5. p-n Junction 5.1. Fabrication of p-n junctions 5.2. Forward & Reverse biased junctions 5.
3. Non-uniformly doped junctions 5.4. Junction breakdown 5.5. The Varactor diode 5.6. The Tunnel diode 5.
7. Junction diode switching times 5.8. Zener diode Chapter 6. p-n Junction current 6.1. Current flow at a junction 6.2.
Small-signal model 6.3. Generation -Recombination currents Chapter 7. Metal-Semiconductor junctions 7.1. The Schottky barrier 7.2. Rectifying contacts 7.
3. Metal-semiconductor ohmic contacts Chapter 8. Bipolar Junction Transistor 8.1. Fundamentals of Bipolar Transistor 8.2. Minority carrier distribution 8.3.
Equivalent circuit models 8.4. CB configuration 8.5. CE configuration 8.6. CC configuration 8.7.
Frequency limitations 8.9. Switching characteristics 8.10. Low frequency h-parameter equivalent circuit 8.11. High frequency effects 8.12.
Frequency limitations 8.13. High frequency transistors Chapter 9. Field effect Transistor 9.1. Junction field effect transistor 9.2. Metal-Semiconductor FET 9.
3. Basic MOS structure 9.4. Capacitance -Voltage characteristics 9.5. MOS Field -Effect Transistor 9.6. Frequency dependence 9.
7. CMOS Technology Chapter 10. Optoelectronic Devices 10.1. Optical absorption 10.2. Photovoltaic cells 10.3.
Photodetectors 10.4. Light emitting diodes 10.5. Laser diodes Chapter 11. Power Devices 11.1. Bipolar power Transistors 11.
2. Power MOSFETS 11.3. Heat sink 11.4. Semiconductor controlled rectifier 11.5. Unijunction Transistor Chapter 12.
Integrated Circuits 12.1. Passive components 12.2. Bipolar Technology 12.3. MOSFET Technology 12.4.
MESFET Technology 12.5. Fundamental limits Chapter 13. Microwave Devices 13.1. Tunnel Diode 13.2. IMPATT Diode 13.
3. BARRIT Diode 13.4. Transferred -Electron Device Chapter 14. GaAs Material & Devices 14.1. Physical and Electrical characteristics of GaAs 14.2.
Schottky diodes and Varactors 14.3. Field -Effect Transistor 14.4. Heterojunction Devices.