Contents Introduction The Big Picture; J.D. Cressler A Brief History of the Field; J.D. Cressler SiGe HBTs Overview: SiGe HBTs; J.D. Cressler Device Physics; J.D.
Cressler Second-Order Effects; J.D. Cressler Low-Frequency Noise; G. Niu Broadband Noise; D.R. Greenberg Microscopic Noise Simulation; G. Niu Linearity; G. Niu pnp SiGe HBTs; J.
D. Cressler Temperature Effects; J.D. Cressler Radiation Effects; J.D. Cressler Reliability Issues; J.D. Cressler Self-Heating and Thermal Effects; J-S.
Rieh Device-Level Simulation; G. Niu SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg Heterostructure FETs Overview: Heterostructure FETs; J.D.
Cressler Biaxial Strained Si CMOS; K. Rim Uniaxial Stressed Si MOSFET; S.E. Thompson SiGe-Channel HFETs; S. Banerjee Industry Examples at State-of-the-Art: Intel''s 90 nm Logic Technologies; S.E. Thompson Other Heterostructure Devices Overview: Other Heterostructure Devices; J.D.
Cressler Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser IMPATT Diodes; E. Kasper and M. Oehme Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R.
Hull Optoelectronic Components Overview: Optoelectronic Components; J.D. Cressler Si-SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim Near-Infrared Detectors; L.
Colace, G. Masini, and G. Assanto Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving Si-SiGe Quantum Cascade Emitters; D.J. Paul Appendices Properties of Silicon and Germanium; J.
D. Cressler The Generalized Moll-Ross Relations; J.D. Cressler Integral Charge-Control Relations; M. Schröter Sample SiGe HBT Compact Model Parameters; R.M. Malladi ; J-S. Rieh Device-Level Simulation; G.
Niu SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg Heterostructure FETs Overview: Heterostructure FETs; J.D. Cressler Biaxial Strained Si CMOS; K.
Rim Uniaxial Stressed Si MOSFET; S.E. Thompson SiGe-Channel HFETs; S. Banerjee Industry Examples at State-of-the-Art: Intel''s 90 nm Logic Technologies; S.E. Thompson Other Heterostructure Devices Overview: Other Heterostructure Devices; J.D. Cressler Resonant Tunneling Devices; S.
Tsujino, D. Grützmacher, and U. Gennser IMPATT Diodes; E. Kasper and M. Oehme Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R. Hull Optoelectronic Components Overview: Optoelectronic Components; J.
D. Cressler Si-SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim Near-Infrared Detectors; L. Colace, G.
Masini, and G. Assanto Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving Si-SiGe Quantum Cascade Emitters; D.J. Paul Appendices Properties of Silicon and Germanium; J.D.
Cressler The Generalized Moll-Ross Relations; J.D. Cressler Integral Charge-Control Relations; M. Schröter Sample SiGe HBT Compact Model Parameters; R.M. Malladi lt;br>Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R.
Hull Optoelectronic Components Overview: Optoelectronic Components; J.D. Cressler Si-SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim Near-Infrared Detectors; L.
Colace, G. Masini, and G. Assanto Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving Si-SiGe Quantum Cascade Emitters; D.J. Paul Appendices Properties of Silicon and Germanium; J.
D. Cressler The Generalized Moll-Ross Relations; J.D. Cressler Integral Charge-Control Relations; M. Schröter Sample SiGe HBT Compact Model Parameters; R.M. Malladi mp;lt;/i> Sample SiGe HBT Compact Model Parameters; R.M.
Malladi.