Physics of Thin-Film Photovoltaics
Physics of Thin-Film Photovoltaics
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Author(s): Karpov, Victor G.
ISBN No.: 9781119651185
Pages: 288
Year: 202111
Format: E-Book
Price: $ 382.18
Status: Out Of Print

Preface xi Part I General and Thin Film PV 1 I. Introduction to Thin Film PV 1 A. The Origin of PV. Junctions 1 B. Fundamental Material Requirements 3 C. Charge Transport. Definition of Thin Film PV 4 D. Distinctive Features of Thin Film PV 7 References 11 Part II One-Dimensional (1D) Diodes and PV 13 II.


1D Diode 13 A. Metal-Insulator-Metal Diode 13 B. Schottky, Reach-Through, and Field-Compensation Diodes 19 1. Schottky Diode 19 2. Reach Through Diodes 21 3. Field Compensation Diode 23 C. P-N Homo-Junctions 24 D. Heterojunctions 26 E.


Other Relevant Types of Diodes 28 F. Field Reversal Diode: A Counterintuitive Case 29 G. Cat''s Whisker Diode 30 III. 1D Solar Cell 32 A. 1D Solar Cell Base Model 32 B. Numerical Modeling of 1D PV 38 1. Governing Equations 39 2. Device Model Parameters 40 3.


Some Modeling Results 42 IV. Photovoltaic Parameters 43 A. Second-Level Parameters 44 B. Practical Solar Cells and Third-Level Metrics 46 C. Indicative Facts 49 D. Phenomenological Interpretation. Ideal Diode with Other Circuitry Elements 52 V. Case Study 54 A.


Field Reversal PV 54 1. Analytical Approach 55 2. Numerical Modeling of the Field Reversal Device Operations 60 B. Miraculous Back Contact 68 References 72 Part III Beyond 1D: Lateral Effects in Thin Film PV 79 VI. Examples of Multidimensional Numerical Modeling 79 VII. Introduction to Random Multidimensional Phenomena 81 VIII. Lateral Screening Length 84 A. Shunt Screening 84 B.


Bias Screening 85 C. Quantitative Approach and Linear Screening Regime 88 IX. Schottky Barrier Nonuniformities 91 X. Semi-Shunts 93 XI. Random Diodes 96 A. Weak Diodes 96 B. Random Diode Arrays in Solar Cells 99 C. Random Diode Arrays in PV Modules and Fields 105 XII.


Nonuniformity Observations 109 A. Cell Level Observations 109 B. Module Level Observations 118 XIII. Nonuniformity Treatment 121 References 125 Part IV Electronic Processes in Materials of Thin Film PV 131 XIV. Morphology, Fluctuations, and the Density of States 132 A. The Materials of Thin Film PV are Fundamentally Different 132 B. Noncrystalline Morphology 134 C. Long Range Fluctuations of Potential Energy 136 D.


Random Potential in Very Thin Structures 139 E. Numerical Estimates and Implications 142 XV. Electronic Transport 144 A. Band Transport in Random Potential 144 B. Hopping Transport Through Thin Noncrystalline Films 147 1. Hopping Between Ideal Electrodes 149 2. Hopping Between Resistive Electrodes 151 3. Critical Area and Mesoscopic Fluctuations 153 XVI.


Recombination in Quasi-Continuous Spectrum 155 XVII. Noncrystalline Junctions 161 XVIII. Piezo and Pyro-PV 164 A. The Nature of Piezo-PV 164 B. Piezo-PV Observations 169 C. The Significance of Piezo-PV 171 References 174 Part V Electro-Thermal Instabilities in Thin Film PV 181 XIX. The Two-Diode Model 182 A. Linear Stability Analysis 183 B.


The Two-Diode Modeling: Numerical Estimates and Scaling 184 XX. Distributed Diode Model 186 A. Introduction 186 B. Linear Stability Analysis 187 XXI. Simplistic Numerical Modeling 188 XXII. Spontaneous Hot Spots 190 A. Introduction 190 B. Observations 191 C.


Numerical Modeling 195 1. Electrical Model 195 2. Thermal Model 199 D. Modeling Results 200 E. Approximate Analytical Model 205 XXIII. Related Work 207 XXIV. Conclusions on the Electro-Thermal Instabilities in Thin Film PV 209 References 210 Part VI Degradation of Thin Film PV 213­­­ XXV. Thin Film vs Crystalline PV Degradation Processes 213 XXVI.


Observations 215 A. Cell Degradation 216 B. Module Degradation 222 XXVII. Categories of Degradation 225 A. General Categories 225 B. Thin-Film PV Instabilities 227 1. Shunting Instability 227 2. Contact Delamination Instability 229 XXVIII.


Accelerated Life Testing 231 A. Examples of Very Strong ALT: HALT 232 1. EBIC HALT 232 2. LBIC HALT 234 B. Actuarial Approach to ALT 235 C. Concluding Remarks on Degradation 236 References 237 Appendix. Some Methodological Aspects of Device Modeling 243 Appendix A: Model of Series Connection 243 Appendix B: The Diffusion Approximation 245 Appendix C: Long Range Potential 248 1. Point Changes 248 2.


Columnar Charges 251 References 253 Index 255.


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