List of Contributors Foreword Preface Disclaimer 1 Introduction to Metalorganic Vapor Phase Epitaxy S.J.C. Irvine and P. Capper 1.1. Historical background to MOVPE 1.2.
Basic reaction mechanisms 1.3. Precursors 1.4. Types of reactor cell 1.5. Introduction to applications of MOVPE 1.5.
1 AlN for UV emitters 1.5.2 AlN for UV emitters 1.5.3 Multijunction solar cells 1.5.4 GaAs and InP transistors for high-frequency devices 1.5.
5 Infrared detectors 1.5.6 Photovoltaic and thermophotovoltaic devices 1.6 Health and Safety considerations in MOVPE 1.7 Conclusions References 2 Fundamentals of MOVPE growth G.B. Stringfellow 2.1 Introduction 2.
2 Thermodynamics 2.2.1 Thermodynamics of MOVPE growth 2.2.2 Solid composition 2.2.3 Phase Separation 2.2.
4 Ordering 2.3 Kinetics 2.3.1 Mass transport 2.3.2 Precursor Pyrolysis 2.3.3 Control of solid composition 2.
4 Surface processes 2.4.1 Surface reconstruction 2.4.2 Atomic-level surface processes 2.4.3 Effects of Surface Processes on Materials Properties 2.4.
4 Surfactants 2.5 Specific Systems 2.5.1 AlGaInP 2.5.2 Group III nitrides 2.5.3 Novel Alloys 2.
6. Summary References 3 Growth, Materials Properties and Applications of III-Vs: Phosphides, Arsenides and Antimonides H. Hardtdegen 3.1 Introduction 3.2 Precursors for column III phosphides, arsenides and antimonides 3.3 GaAs-based materials 3.2.1 GaAs-based materials 3.
2.2 GaInP, AlGaInP/GaAs Properties and Deposition 3.4 InP-based materials 3.4.1 InP properties and deposition 3.4.2 AlInAs/GaInAs/AlGaInAs properties and deposition 3.4.
3 AlInAs/GaInAs/InP heterostructures 3.4.4 In x Ga1- x As y P1- y properties and deposition Electronic 3.5 Column III antimonides, properties and deposition 3.5.1 Deposition of InSb, GaSb and AlSb 3.5.2 Deposition of ternary column III alloys (AlGa)Sb and (GaIn)Sb 3.
5.3 Deposition of ternary column V alloys InAsSb, GaAsSb 3.5.4 Deposition of quaternary column V alloys 3.6 Applications 3.6.1 Epitaxy of electronic device structures 3.6.
2 Epitaxy of optoelectronic device structures 3.7 In situ optical characterization/growth control 3.8 Conclusions References 4 Nitride Semiconductors A. Dadgar and M. Weyers 4.1 Introduction 4.2 Properties of III-Nitrides 4.3 Challenges in growth of III-nitrides 4.
3.1 Lattice and thermal mismatch 4.3.2 Ternary alloys: miscibility and compositional homogeneity 4.3.3 Gas-phase prereactions 4.3.4 Doping of III-Nitrides 4.
4 Substrates 4.4.1 Heteroepitaxy on foreign substrates 4.4.2 GaN growth on sapphire 4.4.3 III-N growth on SiC 4.4.
4 GaN growth on silicon 4.5 MOVPE Growth technology 4.5.1 Precursors 4.5.2 Reactors and in situ monitoring 4.6 Economic Importance 4.6.
1 Optoelectronic devices 4.6.2 Electronic devices 4.7 Conclusion References 5 Metamorphic growth and multi-junction III-V solar cells N. Karam C. M. Fetzer, Xing-Quan Liu, M. A.
Steiner, and K. L. Schulte 5.1 Introduction to MOVPE for Multijunction Solar Cells 5.1.1 III-V PV Solar Cell Opportunities and applications 5.1.2 Metamorphic Multijunction Solar Cells 5.
1.3 Reactor Technology for Metamorphic Epitaxy 5.2 Upright Metamorphic Multijunction (UMM) Solar Cells 5.2.1 Introduction and History of Upright Metamorphic Multijunctions 5.2.2 MOVPE Growth Considerations of UMM 5.2.
3 Growth and Device Results 5.2.4 Challenges and Future Outlook 5.3 Inverted Metamorphic Multijunction (IMM) Solar cells 5.3.1 Introduction and History of Inverted Metamorphic Multijunctions 5.3.2 MOVPE Growth Considerations of IMM 5.
3.3 Growth and Device Results 5.3.4 Growth and Device Results 5.5 Conclusions References 6 Quantum dots E. Hulicius, A. Hospodková, and M. Zíková 6.
1 General introduction to the topic 6.1.1 Definition and History 6.1.2 Paradigm of Quantum Dots 6.1.3 QD types 6.2 AIIIBV materials and structures 6.
2.1 QDs embedded in the structure 6.2.2 Semiconductor materials for embedded QDs 6.3 Growth procedures 6.3.1 Comparison of MBE and MOVPE grown QDs 6.3.
2 Growth parameters 6.3.3 QD surrounding layers 6.4 In situ measurements 6.4.1 Reflectance Anisotropy Spectroscopy of QD growth 6.4.2 Other supporting in situ measurements 6.
5 Structure Characterization 6.5.1 Optical: Photo-, magnetophoto-, electroluminescence, spin detection 6.5.2 Microscopies - AFM, TEM, XSTM, BEEM/BEES 6.5.3 Electrical: photocurrent, capacitance measurements 6.6 Applications 6.
6.1 QD lasers, optical amplifiers and LEDs 6.6.2 QD Detectors, FETs, Photovoltaics, and Memories 6.7 Summary 6.8 Future Perspectives Acknowledgement References 7 III-V nanowires and related nanostructures: from nitrides to antimonides H. J. Joyce 7.
1 Introduction to nanowires and related nanostructures 7.2 Geometric and crystallographic properties of III-V nanowires 7.2.1 Crystal phase 7.2.2 Growth direction, morphology and side-facets 7.3 Particle-assisted MOVPE of nanowires 7.3.
1 The phase of the particle 7.3.2 The role of the particle 7.3.3 Axial and radial growth modes 7.3.4 Self-assisted growth 7.4 Selective-area MOVPE of nanowires and nanostructures 7.
4.1 The role of the mask 7.4.2 Axial and radial growth modes 7.5 Alternative techniques for MOVPE of nanowires 7.6 Novel applications of nanowires 7.7 Concluding remarks References 8 Monolithic III/V integration on (001) Si substrate B. Kunert and K.
Volz 8.1 Introduction 8.2 III/V-Si interface 8.2.1 Si surfaces 8.2.2 Interface formation in the presence of impurities and MO precursors 8.2.
3 Atomic III/V on Si interface structure 8.2.4 Antiphase domains 8.2.5 III/V growth on Si(001) 8.3 Heteroepitaxy of bulk layers on Si 8.3.1 Lattice matched growth on Si 8.
3.2 Metamorphic growth on Si 8.3.3 Selective-area growth (SAG) on Si 8.4 Conclusion References 9 MOVPE Growth of Cadmium Mercury Telluride and Applications C. Maxey, P. Capper, and I. Baker 9.
1 Requirement for epitaxy 9.2 History 9.3 Substrate choices 9.3.1 Orientation 9.3.2 Substrate Material 9.4 Reactor Design 9.
4.1 Process Abatement Systems 9.5 Process Parameters 9.6 Metalorganic Sources 9.7 Uniformity 9.8 Reproducibility 9.9 Doping 9.10 Defects 9.
11 Annealing 9.12 In situ monitoring 9.13 Background to Applications of MOVPE MCT 9.13.1 Introduction to Infrared Imaging and the Atmospheric Windows 9.13.2 MCT Infrared Detector Market in the Modern Era 9.14 Manufacturing Technology for MOVPE Photodiode Arrays 9.
14.1 Mesa Heterojunction Devices (MHJ) 9.14.2 Wafer-Scale Processing 9.15 Advanced MCT Technologies 9.15.1 Small-Pixel Technology 9.15.
2 Higher Operating Temperature (HOT) Device Structures 9.15.3 Two-Color Array Technology 9.15.4 Nonequilibrium Device Structures 9.16 MOVPE MCT for Scientific Applications 9.16.1 Linear-mode Avalanche Photodiode Arrays (LmAPDs) in MOVPE 9.
17 Conclusions and Future Trends for MOVPE MCT arrays Defining Terms References 10 Cadmium Telluride and Related II-VI Materials G. K. and S. J. C. Irvine 10.1 Introduction and historical background 10.2 CdTe homoepitaxy 10.
3 CdTe heteroepitaxy 10.3.1 InSb 10.3.2 Sapphire 10.3.3 GaAs 10.3.
4 Si 10.4 Low-temperature growth and alternative precursors 10.5 Photoassisted MOVPE 10.6 Plasma-assisted MOVPE 10.7 Polycrystalline MOCVD 10.8 Mechanisms for laser reflectance (LR) monitoring 10.9 MOCVD of CdTe for planar solar cells 10.9.
1 CdS and CdZnS window layers 10.9.2 CdTe absorber layer 10.9.3 CdCl2 treatment layer 10.9.4 Photovoltaic planar devices 10.10 Core-shell nanowire photovoltaic devices 10.
11 Inline MOCVD for scaling of CdTe 10.12 MOCVD of CdTe for radiation detectors References 11 Zinc Oxide and related materials V. Munoz-Sanjose and S. J. C. Irvine 11.1. Introduction 11.
2. Sources for the MOCVD Growth of ZnO and related materials 11.2.1. Metalorganic zinc precursors 11.2.2 Metalorganic cadmium precursors 11.2.
3. Metalorganic magnesium precursors 11.2.4. Precursors for oxygen 11.2.5. Precursors for doping 11.
3. Substrates for the MOCVD growth of ZnO and related materials 11.3.1. ZnO single crystals and ZnO templates as substrates 11.3.2 Sapphire, Al2O3 11.3.
3 Silicon 11.3.4 Glass substrates 11.4. Some techniques for the MOCVD growth of ZnO and related materials 11.4.1 Atmospheric and low-pressure conditions in conventional MOCVD systems 11.4.
2 MOCVD-assisted processes 11.5. Crystal growth of ZnO and rela.