About the Editors xxi About the Contributors xxiv A Special Tribute in Memory of Chih-Tang Sah [1932-2025] xxxv Foreword xxxvii Preface xxxix History and Evolution of FET Technology 1 The Miraculous Evolution of the Field-Effect Transistor (FET): From Inception to Future Prospects 1 Hiroshi Iwai 1.1 Introduction 2 1.2 1925-1960: Early Concepts and Challenges in MOSFET Development 8 1.3 1960-1970: The MOSFET Instability Problem 22 1.4 From MOS ICs to MOS LSIs: 1965-1969 25 1.5 Technologies for MOS Integrated Circuits Developed Between 1965 and 1970 29 1.6 First-Generation LSIs--Al- or Si-Gate PMOS LSIs (1969-1971) with 10-8 micrometer Design Rules 33 1.7 Second-Generation LSI: From the Dawn of NMOS LSI to the Mid-1970s 36 1.
8 First Generation of VLSI (3 μm NMOS Technology: Fourth Generation of LSI) Late 1970s to Early 1980s: Emergence of Dry Processing and Stepper Lithography 44 1.9 Transition from NMOS to CMOS in the Mid-1980s 49 1.10 Advances in Scaling Technologies--Introduction of Novel Process Techniques and Materials (1980s to Early 1990s) 52 1.11 Challenges in Scaling into the Sub-50 nm Regime from the Mid-1990s to the 2000s 60 1.12 Development of RF CMOS Device Technology from the Mid-1990s to the Late 1990s 68 1.13 Post-2000: Confronting the Limits of Miniaturization 72 1.14 Future Prospects 82 1.15 Summary and Concluding Remarks 84 2 MOSFET Device Structures and Physical Models: A Historical Review 109 Yuan Taur 2.
1 MOSFET Device Structures 109 2.2 MOSFET Physical Models 121 2.3 Conclusion 143 3 Field-Effect Transistor R&D in the United States: Past, Present, and Future 147 Robert Chau and Suman Datta 3.1 Introduction 147 3.2 Early US FET R&D (1940s-1950s) 148 3.3 Birth of the MOSFET at Bell Labs (1950s-1960s) 149 3.4 Advent of CMOS as Low-Power Logic (1963-1970s) 150 3.5 Moore''s Law and the Classical Scaling Era (1980s-1990s) 151 3.
6 Moore''s Law and the Era of Equivalent Scaling (Late 1990s-Early 2000s) 153 3.7 Inflection Point for FETs (2025 and Beyond) 160 3.8 FET Research in the Era of Zetta-Scale Computing (2030s) 162 3.9 Conclusion 165 4 Asia''s FET R&D Innovations--Past, Present, Future 171 Carlos H. Diaz and Akira Toriumi 4.1 Introduction 171 4.2 Asia''s Rise in the Semiconductor Industry: 1960-1990s 173 4.3 Logic Technology 183 4.
4 Memory Technology 196 4.5 Thin Film Transistors (TFTs) 202 4.6 Compound Semiconductors: III-V FETs 204 4.7 Power FETs 205 4.8 Concluding Remarks 207 5 Fully Depleted SOI Technology--From Equation to Fabrication 221 Thomas Skotnicki and Stephane Monfray 5.1 Prologue (by Thomas Skotnicki) 221 5.2 Introduction 222 5.3 From Equation to Demonstration 223 5.
4 From Lab to Fab 227 5.5 Technology Expansion and Scaling 230 5.6 Summary and Perspective 233 6 MOS-Based RAM 237 Jeonghoon Oh and Sangyeop Baeck 6.1 DRAM Transistor Technology 237 6.2 SRAM Transistor Technology 261 6.3 Conclusion 292 7 Development of Floating Gate FETs as Nonvolatile Memories 299 Stefan K. Lai, Koji Sakui, and Riichiro Shirota 7.1 Introduction 299 7.
2 EPROM and EEPROM 300 7.3 NOR Flash 303 7.4 NAND Flash 308 7.5 Summary and Acknowledgment 321 8 FET-Based Logic Devices and Systems 325 Ghavam G. Shahidi 8.1 Introduction 325 8.2 From Dash-Dots and Relays to 0s and 1s and FETs 328 8.3 From the Invention of FET to the First Commercial FET-Based Microprocessor 328 8.
4 The Quintessential FET-Based Device: The Personal Computer 330 8.5 Microprocessors: Enabling Next Node Manufacturing 332 8.6 Multiply-Accumulate: DSP, Digital Communications 335\ 8.7 The Ultimate FET-Based Device: The iPhone 337 8.8 The Magnificent Computers: Data Centers (and the Environment) 339 8.9 GPUs and AI: Not Enough FLOPs 340 8.10 Energy Per Switch: How Much Lower? 342 9 SiC FETs for High-Power and High-Temperature Electronics 353 Tsunenobu Kimoto 9.1 Introduction--SiC for High-Power and High-Temperature Applications 353 9.
2 Interface Properties and Channel Mobility in SiC MOSFETs 358 9.3 SiC Power MOSFETs 362 9.4 SiC Power JFETs and Comparison with Power MOSFETs, SiC Bipolar Switches 377 9.5 SiC CMOS ICs 381 9.6 SiC JFET ICs 383 9.7 Applications and Future Outlook for SiC FETs 386 10 III-V and III-N Field-Effect Transistors 395 Giovanni Ghione and Matteo Meneghini 10.1 III-V Field-Effect Transistors and ICs 395 10.2 III-N Field-Effect Transistors 404 10.
3 Conclusions 415 11 CMOS Image Sensors: Driving the Digital Imaging Era 429 Yusuke Oike 11.1 Introduction 429 11.2 Historical Background and Fundamental Principles 430 11.3 Technological Advancements in the 2000s 434 11.4 Stacked Device Technologies 440 11.5 Pixel Performance Metrics and Enhancement Technologies 443 11.6 Extension of Sensing Capabilities 452 11.7 Emerging Technologies and Future Trends 459 12 The Thin-Film Transistor 475 Yue Kuo and Arokia Nathan 12.
1 Original FET Concept and TFT Development History 475 12.2 Market Size and Growth 479 12.3 Structures, Thin-Film Materials, and Processes 479 12.4 Device Figures of Merit and Compact Models 481 12.5 Complex Material-Process-Device Relationship 487 12.6 Applications in Flat Panel Displays, Circuits, and Beyond 488 12.7 Emerging Applications and Challenges 496 12.8 Summary 498 13 How to Manufacture the Impossible: The Secrets of Process Integration for Hyper-scaled MOSFET Products 507 Kelin J.
Kuhn 13.1 Introduction 507 13.2 The Secret of Self-Alignment 507 13.3 The Secret of Replacement Gate 511 13.4 The Secret of Fully Depleted Channels 515 13.5 What Happens Next? 521 14 50 Years of RF CMOS Design 523 Behzad Razavi 14.1 1966-1969: RF CMOS Is Born 523 14.2 1970: SPICE Is Born 525 14.
3 1980: An Integrated Direct-Conversion RX Is Reported 526 14.4 Invasion of Analog Designers 526 14.5 1986-1988: RF CMOS--Again 527 14.6 1990s: High Integration and RF CMOS--Third Time Is a Charm 527 14.7 1993: The ÎΣ Fractional-N Synthesizer Is Born 531 14.8 Direct Conversion in CMOS 531 14.9 1996: Cadence Introduces a Noise Simulator for Time-Variant Circuits 532 14.10 2000s: Direct Conversion Matures 533 14.
11 Effect of Technology Scaling 534 14.12 UWB, Cognitive, WiGig, and 5G Radios 534 14.13 Multiband, Multimode Radios Prosper 535 14.14 Phased-Array Transceivers 536 14.15 Conclusion 537 15 Compact FET-Based Device Modeling for Circuit Simulation 543 Mitiko Miura-Mattausch and Hans Jürgen Mattausch 15.1 Introduction 544 15.2 Transistor Operations 545 15.3 MOSFET Equations and Their Applications 548 15.
4 Compact Modeling: Different Approaches 552 15.5 Compact Modeling: Model Standardization 556 15.6 Advanced Compact Modeling Important for Accurate Circuit Simulation 560 15.7 MOSFET-Descendant Compact Models for Wide Applications 570 15.8 Advanced FET Generations 581 15.9 Future Trends 584 15.10 Circuit Design Perspectives 584 15.11 Conclusion 585 16 Evolution of Photolithography in Semiconductor Manufacturing 597 Anthony Yen, Winfried Kaiser, and Akiyoshi Suzuki 16.
1 Introduction 597 16.2 Contact/Proximity Printing of Integrated-Circuit Patterns 599 16.3 1Ã Projection Imaging of Mask Patterns onWafer 604 16.4 Step-and-Repeat Projection Lithography 606 16.5 Deep Ultraviolet and Step-and-Scan Lithography 613 16.6 193nm and (Ill-Fated) 157nm Lithography 620 16.7 193nm Immersion Lithography and Multiple Patterning 622 16.8 Extreme Ultraviolet Lithography 624 16.
9 Summary and Outlook 631 17 Back-End-of-Line Interconnect Technology 651 Takayuki Ohba and Takashi Yoda 17.1 Introduction 651 17.2 Technology Evolution of Interconnect Modules 653 17.3 Emerging Era of Interconnects for Three-Dimensional Integration 665 17.4 Connecting Variation and Beyond 668 17.5 2.5D and 3D Processes Using Damascene Interconnects 671 17.6 Conclusion and Future Directions in Interconnect Technology 673 18 Three-Dimensional Field-Effect Transistor--From Concept to Computing to Artificial Intelligence 685 Digh Hisamoto and Samar K.
Saha 18.1 Introduction 685 18.2 The Dawn of Semiconductor Devices and Computers 687 18.3 The Emergence of the Transistor Computer 689 18.4 Golden Age of Planar MOSFETs 692 18.5 Domain-Specific Hardware Era--The Emergence of Three-Dimensional Transistor: FinFET 695 18.6 Conclusions 702 19 Developments of GAAFET Technologies and Future Challenges 709 Dong-Won Kim 19.1 Introduction: Scaling limitations of Planar MOSFET and FinFET 710 19.
2 Comparison of GAAFETs Candidates and Development History 715 19.3 Operation of GAAFET 721 19.4 Enhanced Design Considerations for GAAFET with Significant Modifications in Structural Components 735 19.5 Reliability Insights and Challenges in GAA MBCFET 752 19.6 Design Technology Co-Optimi.